IRF5305SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-252

Published :

2000

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

280 mJ

Terminal Form :

Gull wing

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

55V

Rds On (Max) @ Id, Vgs :

60m Ω @ 16A, 10V

JESD-609 Code :

e3

Terminal Position :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Packaging :

Tube

Drain-source On Resistance-Max :

0.06Ohm

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Number of Terminations :

2

FET Type :

P-Channel

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

31A

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Power Dissipation-Max :

3.8W Ta 110W Tc

Pulsed Drain Current-Max (IDM) :

110A

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

55V