IRF5305PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Max Junction Temperature (Tj) :

175°C

Vgs (Max) :

±20V

Min Operating Temperature :

-55°C

Packaging :

Tube

Lead Free :

Contains Lead, Lead Free

Resistance :

60mOhm

Fall Time (Typ) :

63 ns

Element Configuration :

Single

Termination :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

66ns

REACH SVHC :

No SVHC

Power Dissipation-Max :

110W Tc

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2000

Rds On Max :

60 mΩ

Supplier Device Package :

TO-220AB

Continuous Drain Current (ID) :

-31A

Turn-Off Delay Time :

39 ns

Recovery Time :

110 ns

Height :

19.3mm

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Dual Supply Voltage :

-55V

Current Rating :

-31A

Threshold Voltage :

-4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Package / Case :

TO-220-3

FET Type :

P-Channel

Power Dissipation :

110W

Mounting Type :

Through Hole

Width :

4.69mm

Voltage - Rated DC :

-55V

Number of Pins :

3

Nominal Vgs :

-4 V

Drain to Source Voltage (Vdss) :

55V

RoHS Status :

ROHS3 Compliant

Lead Pitch :

2.54mm

Length :

10.5156mm

Number of Elements :

1

Drain to Source Breakdown Voltage :

-55V

Number of Channels :

1

Turn On Delay Time :

14 ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

60mOhm

Input Capacitance :

1.2nF

Contact Plating :

Tin

Max Operating Temperature :

175°C

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

60mOhm @ 16A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V