IRF5305LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2003

Mount :

Through Hole

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

REACH SVHC :

No SVHC

Drain to Source Resistance :

60mOhm

Number of Pins :

3

Fall Time (Typ) :

63 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Min Operating Temperature :

-55°C

Power Dissipation-Max :

3.8W Ta 110W Tc

Input Capacitance :

1.2nF

Width :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

60 mΩ

Resistance :

60mOhm

RoHS Status :

RoHS Compliant

Height :

9.65mm

Drain to Source Voltage (Vdss) :

55V

Max Operating Temperature :

175°C

Supplier Device Package :

TO-262

Continuous Drain Current (ID) :

-31A

Power Dissipation :

110W

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-55V

Mounting Type :

Through Hole

Turn On Delay Time :

14 ns

Length :

10.668mm

Packaging :

Tube

Series :

HEXFET®

Rise Time :

66ns

Nominal Vgs :

-4 V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

60mOhm @ 16A, 10V

Turn-Off Delay Time :

39 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Gate to Source Voltage (Vgs) :

20V