IRF5210STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Turn On Delay Time :

14 ns

Drain to Source Breakdown Voltage :

-100V

Radiation Hardening :

No

Element Configuration :

Single

Length :

10.668mm

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Threshold Voltage :

-4V

Contact Plating :

Tin

Power Dissipation-Max :

3.1W Ta 170W Tc

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Nominal Vgs :

-4 V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Height :

4.83mm

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

-40A

FET Type :

P-Channel

Number of Pins :

3

Dual Supply Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Width :

9.65mm

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Series :

HEXFET®

Fall Time (Typ) :

55 ns

Voltage - Rated DC :

-100V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Power Dissipation :

3.8W

Recovery Time :

260 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

63ns

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Turn-Off Delay Time :

72 ns

Current Rating :

-40A

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2780pF @ 25V

Rds On (Max) @ Id, Vgs :

60m Ω @ 38A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1998

Number of Terminations :

2

Resistance :

60mOhm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Terminal Form :

Gull wing

Termination :

SMD/SMT

Factory Lead Time :

12 Weeks

Number of Channels :

1

Case Connection :

DRAIN