IRF5210PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

86ns

Current Rating :

-40A

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

250

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

200W Tc

ECCN Code :

EAR99

Case Connection :

DRAIN

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

40A Tc

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

81 ns

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Lead Pitch :

2.54mm

Width :

4.69mm

Number of Channels :

1

Resistance :

60mOhm

Number of Elements :

1

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Threshold Voltage :

-4V

Nominal Vgs :

-4 V

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Turn On Delay Time :

17 ns

Recovery Time :

260 ns

Turn-Off Delay Time :

79 ns

Power Dissipation :

200W

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

-100V

Lead Free :

Lead Free

Length :

10.5156mm

Termination :

Through Hole

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Published :

1998

Mount :

Through Hole

Series :

HEXFET®

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

780 mJ

Factory Lead Time :

12 Weeks

Package / Case :

TO-220-3

Voltage - Rated DC :

-100V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

60m Ω @ 24A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Height :

19.8mm

Max Junction Temperature (Tj) :

175°C

Radiation Hardening :

No

Element Configuration :

Single

Continuous Drain Current (ID) :

-40A

Dual Supply Voltage :

-100V