IRF5210L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.8W Ta 200W Tc

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

225

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

100V

Published :

1998

HTS Code :

8541.29.00.95

Vgs (Max) :

±20V

FET Type :

P-Channel

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Position :

Single

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Drain-source On Resistance-Max :

0.06Ohm

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Surface Mount :

No

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Drain Current-Max (Abs) (ID) :

38A

JESD-30 Code :

R-PSIP-T3

Rds On (Max) @ Id, Vgs :

60m Ω @ 24A, 10V

Pulsed Drain Current-Max (IDM) :

140A

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (Eas) :

120 mJ

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

100V