IRF520STRL
- Mfr.Part #
- IRF520STRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 9.2A D2PAK
- Stock
- 6,303
- In Stock :
- 6,303
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 9.2A
- Drain to Source Voltage (Vdss) :
- 100V
- RoHS Status :
- Non-RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- DS Breakdown Voltage-Min :
- 100V
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.27Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 9.2A Tc
- JESD-609 Code :
- e0
- Pin Count :
- 4
- Pulsed Drain Current-Max (IDM) :
- 37A
- Power Dissipation-Max :
- 3.7W Ta 60W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 5.5A, 10V
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.29.00.95
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- Unknown
- Configuration :
- Single
- Vgs (Max) :
- ±20V
- Qualification Status :
- Not Qualified
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- TIN LEAD
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2017
- ECCN Code :
- EAR99
- Datasheets
- IRF520STRL
N-Channel Tape & Reel (TR) 270m Ω @ 5.5A, 10V ±20V 360pF @ 25V 16nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF520STRL Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9.2A.There is no pulsed drain current maximum for this device based on its rated peak drain current 37A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF520STRL Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 9.2A
based on its rated peak drain current 37A.
a 100V drain to source voltage (Vdss)
IRF520STRL Applications
There are a lot of Vishay Siliconix
IRF520STRL applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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