IRF520S
- Mfr.Part #
- IRF520S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 9.2A D2PAK
- Stock
- 12,467
- In Stock :
- 12,467
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Number of Channels :
- 1
- Width :
- 9.65mm
- RoHS Status :
- Non-RoHS Compliant
- Weight :
- 1.437803g
- Current - Continuous Drain (Id) @ 25°C :
- 9.2A Tc
- Rds On Max :
- 270 mΩ
- Turn-Off Delay Time :
- 19 ns
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Turn On Delay Time :
- 8.8 ns
- Voltage - Rated DC :
- 100V
- Drain to Source Resistance :
- 270mOhm
- Rds On (Max) @ Id, Vgs :
- 270mOhm @ 5.5A, 10V
- Supplier Device Package :
- D2PAK
- Height :
- 4.83mm
- Min Operating Temperature :
- -55°C
- Input Capacitance :
- 360pF
- Published :
- 2017
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10.41mm
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 9.2A
- Fall Time (Typ) :
- 20 ns
- Mounting Type :
- Surface Mount
- Lead Free :
- Contains Lead
- Power Dissipation-Max :
- 3.7W Ta 60W Tc
- Rise Time :
- 30ns
- Power Dissipation :
- 3.7W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Max Operating Temperature :
- 175°C
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current Rating :
- 9.2A
- Datasheets
- IRF520S
N-Channel Tube 270mOhm @ 5.5A, 10V ±20V 360pF @ 25V 16nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF520S Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 360pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 9.2A amps.It is [19 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 270mOhm.A turn-on delay time of 8.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF520S Features
a continuous drain current (ID) of 9.2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRF520S Applications
There are a lot of Vishay Siliconix
IRF520S applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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