IRF520NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

9.7A Tc

FET Type :

N-Channel

Lead Pitch :

2.54mm

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

9.7A

ECCN Code :

EAR99

Mount :

Through Hole

Number of Terminations :

3

Power Dissipation-Max :

48W Tc

Voltage - Rated DC :

100V

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.5156mm

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Drain Current-Max (Abs) (ID) :

9.5A

Fall Time (Typ) :

23 ns

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Published :

1998

Series :

HEXFET®

Turn On Delay Time :

4.5 ns

Recovery Time :

150 ns

Current Rating :

9.7A

Number of Pins :

3

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Dual Supply Voltage :

100V

Rds On (Max) @ Id, Vgs :

200m Ω @ 5.7A, 10V

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Threshold Voltage :

4V

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.2Ohm

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Number of Elements :

1

Turn-Off Delay Time :

32 ns

Rise Time :

23ns

Width :

4.69mm

Package / Case :

TO-220-3

Power Dissipation :

48W

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Case Connection :

DRAIN

Height :

15.24mm