IRF520NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

23ns

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.2Ohm

Threshold Voltage :

4V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Rds On (Max) @ Id, Vgs :

200m Ω @ 5.7A, 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

4.5 ns

Contact Plating :

Tin

Case Connection :

DRAIN

Lead Free :

Lead Free

Packaging :

Tube

Power Dissipation-Max :

48W Tc

Fall Time (Typ) :

23 ns

Continuous Drain Current (ID) :

9.7A

Factory Lead Time :

12 Weeks

Width :

4.69mm

Length :

10.5156mm

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

9.5A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Number of Elements :

1

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Transistor Element Material :

SILICON

Published :

1998

Lead Pitch :

2.54mm

ECCN Code :

EAR99

Power Dissipation :

48W

Vgs (Max) :

±20V

Current Rating :

9.7A

Voltage - Rated DC :

100V

Height :

15.24mm

Current - Continuous Drain (Id) @ 25°C :

9.7A Tc

Recovery Time :

150 ns

Drain to Source Breakdown Voltage :

100V

Dual Supply Voltage :

100V

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Mount :

Through Hole

Nominal Vgs :

4 V

Turn-Off Delay Time :

32 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V