IRF520N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

48W Tc

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

9.7A

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100V

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

9.7A Tc

Number of Elements :

1

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

91 mJ

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1995

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

High Reliability

Case Connection :

DRAIN

FET Type :

N-Channel

Series :

HEXFET®

Packaging :

Tube

Drain-source On Resistance-Max :

0.2Ohm

Rds On (Max) @ Id, Vgs :

200m Ω @ 5.7A, 10V

Pulsed Drain Current-Max (IDM) :

38A

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Drain to Source Voltage (Vdss) :

100V