IPW65R019C7FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Number of Terminations :

3

Turn-Off Delay Time :

106 ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Elements :

1

Max Dual Supply Voltage :

650V

Vgs(th) (Max) @ Id :

4V @ 2.92mA

Series :

CoolMOS™ C7

Fall Time (Typ) :

5 ns

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Rise Time :

27ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

30 ns

Input Capacitance (Ciss) (Max) @ Vds :

9900pF @ 400V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

19m Ω @ 58.3A, 10V

Power Dissipation :

446W

Power Dissipation-Max :

446W Tc

Terminal Position :

Single

Packaging :

Tube

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

75A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

496A

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ