IPW60R024P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 2.03mA

Number of Elements :

1

Reach Compliance Code :

Compliant

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7144pF @ 400V

Rds On (Max) @ Id, Vgs :

24m Ω @ 42.4A, 10V

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.024Ohm

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

101A

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

386A

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

164nC @ 10V

Number of Terminations :

3

Case Connection :

DRAIN

Surface Mount :

No

Series :

CoolMOS™ P7

DS Breakdown Voltage-Min :

600V

FET Type :

N-Channel

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

291W Tc

Drain to Source Voltage (Vdss) :

650V

Current - Continuous Drain (Id) @ 25°C :

101A Tc

Avalanche Energy Rating (Eas) :

406 mJ