IPW60R031CFD7

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

31m Ω @ 32.6A, 10V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

600V

Published :

2014

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

63A Tc

Surface Mount :

No

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5623pF @ 400V

Power Dissipation-Max :

278W Tc

Gate Charge (Qg) (Max) @ Vgs :

141nC @ 10V

Height :

25.4mm

Series :

CoolMOS™ CFD7

Number of Elements :

1

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

48 ns

Power Dissipation :

278W

Terminal Position :

Single

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

175 ns

Number of Channels :

1

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

650V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4.5V @ 1.63mA

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

63A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

326 mJ

Pulsed Drain Current-Max (IDM) :

277A

Packaging :

Tube

Factory Lead Time :

18 Weeks

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant