IPW60R017C7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Terminal Form :

THROUGH-HOLE

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

109A

Number of Elements :

1

Power Dissipation :

446W

Number of Terminations :

3

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

495A

Drain to Source Resistance :

15mOhm

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Terminal Position :

Single

Height :

25.4mm

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Package / Case :

TO-247-3

Turn On Delay Time :

30 ns

Avalanche Energy Rating (Eas) :

582 mJ

Drain to Source Voltage (Vdss) :

650V

Drain to Source Breakdown Voltage :

600V

Published :

2013

Surface Mount :

No

Turn-Off Delay Time :

106 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING