IPW60R037P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Turn-Off Delay Time :

90 ns

Gate to Source Voltage (Vgs) :

20V

Series :

CoolMOS™ P7

ECCN Code :

EAR99

Surface Mount :

No

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

280A

Number of Channels :

1

Power Dissipation-Max :

255W Tc

Max Junction Temperature (Tj) :

150°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

25.4mm

Drain to Source Voltage (Vdss) :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

295 mJ

Case Connection :

DRAIN

Published :

2014

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

22 ns

Power Dissipation :

255W

Mounting Type :

Through Hole

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

37m Ω @ 29.5A, 10V

Continuous Drain Current (ID) :

76A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Number of Terminations :

3

Factory Lead Time :

18 Weeks

Drain-source On Resistance-Max :

0.037Ohm

Drain to Source Breakdown Voltage :

600V

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

5243pF @ 400V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 1.48mA

Gate Charge (Qg) (Max) @ Vgs :

121nC @ 10V

JESD-609 Code :

e3