IPW60R040C7XKSA1
- Mfr.Part #
- IPW60R040C7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 50A TO247-3
- Stock
- 6,028
- In Stock :
- 6,028
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.04Ohm
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- CoolMOS™ C7
- Pulsed Drain Current-Max (IDM) :
- 211A
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 50A
- Number of Elements :
- 1
- Power Dissipation-Max :
- 227W Tc
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 4340pF @ 400V
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Halogen Free :
- Halogen Free
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 24.9A, 10V
- JESD-30 Code :
- R-PSFM-T3
- Avalanche Energy Rating (Eas) :
- 249 mJ
- Published :
- 2007
- Vgs(th) (Max) @ Id :
- 4V @ 1.24mA
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 18 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Max Dual Supply Voltage :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Datasheets
- IPW60R040C7XKSA1

N-Channel Tube 40m Ω @ 24.9A, 10V ±20V 4340pF @ 400V 107nC @ 10V TO-247-3
IPW60R040C7XKSA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 249 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4340pF @ 400V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.Peak drain current for this device is 211A, which is its maximum pulsed drain current.This device supports dual supply voltages maximally powered by 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IPW60R040C7XKSA1 Features
the avalanche energy rating (Eas) is 249 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 211A.
IPW60R040C7XKSA1 Applications
There are a lot of Infineon Technologies
IPW60R040C7XKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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