IPW60R018CFD7XKSA1
- Mfr.Part #
- IPW60R018CFD7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N CH
- Stock
- 1
- In Stock :
- 1
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- * Fullname:
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 18 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- CoolMOS™
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IPW60R018CFD7XKSA1

N-Channel
IPW60R018CFD7XKSA1 Description
The 600 V CoolMOS? CFD7 is Infineon’s latest high voltage super junction MOSFET technology with an integrated fast body diode, completing the CoolMOS? 7 series. It is the ideal choice for resonant topologies in high-power SMPS applications, such as server, telecom, and EV charging stations.
The new CoolMOS? CFD7 is the successor to the CoolMOS? CFD2 family. CoolMOS? CFD7 comes with a reduced gate charge (Qg), improved turn-off behavior, and a reverse recovery charge (Qrr) of up to 69 percent lower compared to the competition, as well as the lowest
reverse recovery time (trr) in the market. Due to these features, CoolMOS? CFD7 offers the highest efficiency and best-in-class reliability in soft switching topologies such as LLC and ZVS phase-shift full-bridge. In addition, CoolMOS? CFD7 enables higher power density
thanks to its optimized RDS(on).
IPW60R018CFD7XKSA1 Features
Ultra-fast body diode
Best-in-class reverse recovery
charge (Qrr)
Improved reverse diode dv/dt and
dif/dt ruggedness
Lowest FOM RDS(on) x Qg
and Eoss
Best-in-class RDS(on)/package
combinations
IPW60R018CFD7XKSA1 Benefits
Best-in-class hard commutation
ruggedness
Highest reliability for resonant
topologies
Highest efficiency with outstanding
ease-of-use/performance trade-off
Enabling increased power density
solutions
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