IPW60R045CPAFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

431W Tc

Number of Terminations :

3

Power Dissipation :

431W

Drain to Source Breakdown Voltage :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

60A

Rds On (Max) @ Id, Vgs :

45m Ω @ 44A, 10V

Series :

Automotive, AEC-Q101, CoolMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Vgs (Max) :

±20V

Mounting Type :

Through Hole

FET Type :

N-Channel

Max Junction Temperature (Tj) :

150°C

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Pulsed Drain Current-Max (IDM) :

230A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

60A Tc

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

10 ns

Pin Count :

3

Operating Temperature :

-40°C~150°C TJ

Height :

25.4mm

Max Dual Supply Voltage :

600V

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Number of Elements :

1

Number of Channels :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

100 ns

Package / Case :

TO-247-3

Published :

2010

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 100V

JESD-609 Code :

e3

Pbfree Code :

yes

Turn On Delay Time :

30 ns

Transistor Element Material :

SILICON

Rise Time :

20ns

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.045Ohm

Vgs(th) (Max) @ Id :

3.5V @ 3mA