FDS8960C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

35V

Number of Elements :

2

Max Power Dissipation :

2W

Contact Plating :

Tin

Max Junction Temperature (Tj) :

150°C

Power - Max :

900mW

Weight :

230.4mg

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

Continuous Drain Current (ID) :

7A

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 5V

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Channels :

2

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Additional Feature :

FAST SWITCHING

Series :

PowerTrench®

ECCN Code :

EAR99

Turn-Off Delay Time :

20 ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Published :

2005

Fall Time (Typ) :

5 ns

Resistance :

24mOhm

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 15V

Power Dissipation :

2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

3.9mm

Nominal Vgs :

2 V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

25V

FET Type :

N and P-Channel

Length :

4.9mm

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

35V

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

7A

Termination :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

7A 5A

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Height :

1.75mm

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

REACH SVHC :

No SVHC

Terminal Position :

Dual

Current Rating :

7A

Rise Time :

16ns

Threshold Voltage :

1V

Vgs(th) (Max) @ Id :

3V @ 250µA