FDS8447
- Mfr.Part #
- FDS8447
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 12.8A 8SOIC
- Stock
- 645
- In Stock :
- 645
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2.5W
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Length :
- 5mm
- Series :
- PowerTrench®
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 40V
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 10.5mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 20V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Terminations :
- 8
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 27 ns
- Number of Elements :
- 1
- Fall Time (Typ) :
- 7 ns
- Rise Time :
- 14ns
- Threshold Voltage :
- 1.8V
- Turn On Delay Time :
- 11 ns
- Packaging :
- Tape and Reel (TR)
- Width :
- 4mm
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Weight :
- 130mg
- Current - Continuous Drain (Id) @ 25°C :
- 12.8A Ta
- Pulsed Drain Current-Max (IDM) :
- 50A
- Published :
- 2006
- Terminal Position :
- Dual
- Current Rating :
- 12.8A
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 2.5W Ta
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Height :
- 1.5mm
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Continuous Drain Current (ID) :
- 12.8A
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 12.8A, 10V
- Mounting Type :
- Surface Mount
- Datasheets
- FDS8447

N-Channel Tape & Reel (TR) 10.5m Ω @ 12.8A, 10V ±20V 2600pF @ 20V 49nC @ 10V 8-SOIC (0.154, 3.90mm Width)
Description
A single N-channel MOSFET called the FDS8447 was created using the cutting-edge PowerTrench? method. It has been specifically designed to reduce the resistance in the ON-state while yet delivering excellent switching performance. An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.
Features
-
Low gate charge
-
High performance Trench technology for extremely low RDS (ON)
-
High power and current handing capability
-
RoHS compliant
-
Max rDS(on)=10.5mΩ at VGS=10V, ID=12.8A
-
Max rDS(on)=12.3mΩ at VGS-4.5V, ID=11.4A
Applications
-
DC-DC conversion
-
Small motor control
-
Solar inverters
-
Automotive applications
-
Switch, buck and synchronous rectification
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