FDS8447
- Mfr.Part #
- FDS8447
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 12.8A 8SOIC
- Stock
- 645
- In Stock :
- 645
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 40V
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Fall Time (Typ) :
- 7 ns
- Number of Pins :
- 8
- Power Dissipation :
- 2.5W
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 12.8A
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 2600pF @ 20V
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 12.8A, 10V
- Width :
- 4mm
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Length :
- 5mm
- Resistance :
- 10.5mOhm
- Current Rating :
- 12.8A
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 12.8A Ta
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 27 ns
- Voltage - Rated DC :
- 40V
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 50A
- Threshold Voltage :
- 1.8V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 11 ns
- JESD-609 Code :
- e3
- Height :
- 1.5mm
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Published :
- 2006
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Weight :
- 130mg
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Number of Terminations :
- 8
- Power Dissipation-Max :
- 2.5W Ta
- Rise Time :
- 14ns
- FET Type :
- N-Channel
- Datasheets
- FDS8447

N-Channel Tape & Reel (TR) 10.5m Ω @ 12.8A, 10V ±20V 2600pF @ 20V 49nC @ 10V 8-SOIC (0.154, 3.90mm Width)
Description
A single N-channel MOSFET called the FDS8447 was created using the cutting-edge PowerTrench? method. It has been specifically designed to reduce the resistance in the ON-state while yet delivering excellent switching performance. An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.
Features
-
Low gate charge
-
High performance Trench technology for extremely low RDS (ON)
-
High power and current handing capability
-
RoHS compliant
-
Max rDS(on)=10.5mΩ at VGS=10V, ID=12.8A
-
Max rDS(on)=12.3mΩ at VGS-4.5V, ID=11.4A
Applications
-
DC-DC conversion
-
Small motor control
-
Solar inverters
-
Automotive applications
-
Switch, buck and synchronous rectification
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