FDS86242

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Power Dissipation :

2.5W

Width :

5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.75mm

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

9 Weeks

Drain-source On Resistance-Max :

0.067Ohm

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 75V

Feedback Cap-Max (Crss) :

5 pF

Number of Elements :

1

Nominal Vgs :

3.5 V

Continuous Drain Current (ID) :

4.1A

Mounting Type :

Surface Mount

Number of Channels :

1

Power Dissipation-Max :

2.5W Ta 5W Tc

Length :

4mm

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

67m Ω @ 4.1A, 10V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Published :

2008

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e4

Rise Time :

10ns

Weight :

130mg

Drain to Source Breakdown Voltage :

150V

Series :

PowerTrench®

Fall Time (Typ) :

10 ns

Threshold Voltage :

2V

Number of Terminations :

8

Turn-Off Delay Time :

13 ns

Turn On Delay Time :

7.9 ns

Number of Pins :

8

Vgs (Max) :

±20V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Max Junction Temperature (Tj) :

150°C

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta