FDS86141

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Mfr.Part #
FDS86141
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 100V 7A 8SOIC
Stock
33,810
In Stock :
33,810

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
JESD-609 Code :
e4
Current - Continuous Drain (Id) @ 25°C :
7A Ta
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Weight :
130mg
Power Dissipation :
5W
Width :
5mm
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
0.023Ohm
Input Capacitance (Ciss) (Max) @ Vds :
934pF @ 50V
Drain to Source Breakdown Voltage :
100V
Rds On (Max) @ Id, Vgs :
23m Ω @ 7A, 10V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Length :
4mm
Mounting Type :
Surface Mount
Fall Time (Typ) :
3.2 ns
Factory Lead Time :
9 Weeks
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Number of Pins :
8
Height :
1.5mm
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Turn On Delay Time :
8.3 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Dual
Threshold Voltage :
3.1V
Nominal Vgs :
3.1 V
Turn-Off Delay Time :
14.3 ns
Terminal Form :
Gull wing
Power Dissipation-Max :
2.5W Ta
Pbfree Code :
yes
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
16.5nC @ 10V
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
7A
Element Configuration :
Single
Continuous Drain Current (ID) :
7A
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Number of Terminations :
8
Series :
PowerTrench®
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Published :
2017
Contact Plating :
Tin
Rise Time :
3.2ns
Mount :
Surface Mount
Datasheets
FDS86141
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS86141 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, FDS86141 pinout, FDS86141 datasheet PDF, FDS86141 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS86141 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS86141


N-Channel Tape & Reel (TR) 23m Ω @ 7A, 10V ±20V 934pF @ 50V 16.5nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS86141 Description


FDS86141 is a 100V N-Channel Power Trench? MOSFET. This N-channel MOSFET FDS86141 is produced using an advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDS86141 is in the SOIC-8 package with 5W power dissipation.



FDS86141 Features


  • Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A

  • Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A

  • High Performance Trench Technology for Extremely Low rDS(on)

  • 100% UIL Tested

  • RoHS Compliant



FDS86141 Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


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