FDS86141
- Mfr.Part #
- FDS86141
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7A 8SOIC
- Stock
- 33,810
- In Stock :
- 33,810
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- JESD-609 Code :
- e4
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Weight :
- 130mg
- Power Dissipation :
- 5W
- Width :
- 5mm
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.023Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 934pF @ 50V
- Drain to Source Breakdown Voltage :
- 100V
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 7A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Length :
- 4mm
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 3.2 ns
- Factory Lead Time :
- 9 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 8
- Height :
- 1.5mm
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Turn On Delay Time :
- 8.3 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Threshold Voltage :
- 3.1V
- Nominal Vgs :
- 3.1 V
- Turn-Off Delay Time :
- 14.3 ns
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 2.5W Ta
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 16.5nC @ 10V
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 7A
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 7A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Terminations :
- 8
- Series :
- PowerTrench®
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Published :
- 2017
- Contact Plating :
- Tin
- Rise Time :
- 3.2ns
- Mount :
- Surface Mount
- Datasheets
- FDS86141

N-Channel Tape & Reel (TR) 23m Ω @ 7A, 10V ±20V 934pF @ 50V 16.5nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS86141 Description
FDS86141 is a 100V N-Channel Power Trench? MOSFET. This N-channel MOSFET FDS86141 is produced using an advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDS86141 is in the SOIC-8 package with 5W power dissipation.
FDS86141 Features
-
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
-
Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A
-
High Performance Trench Technology for Extremely Low rDS(on)
-
100% UIL Tested
-
RoHS Compliant
FDS86141 Applications
-
Cellular phones
-
Laptop computers
-
Photovoltaic systems
-
Wind turbines
-
Shunt voltage regulator and the series voltage regulator
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