FDS86106
- Mfr.Part #
- FDS86106
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 3.4A 8SOIC
- Stock
- 22
- In Stock :
- 22
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Power Dissipation :
- 5W
- Continuous Drain Current (ID) :
- 3.4A
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Published :
- 2008
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 8 ns
- Length :
- 4mm
- Feedback Cap-Max (Crss) :
- 3 pF
- Nominal Vgs :
- 2.9 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 5mm
- JESD-609 Code :
- e4
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Height :
- 1.5mm
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 208pF @ 50V
- Power Dissipation-Max :
- 5W Ta
- ECCN Code :
- EAR99
- Weight :
- 130mg
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 8
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 3.4A, 10V
- Number of Pins :
- 8
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Series :
- PowerTrench®
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 10 ns
- Factory Lead Time :
- 9 Weeks
- Threshold Voltage :
- 2.9V
- Turn On Delay Time :
- 5 ns
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A Ta
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 10ns
- Transistor Application :
- SWITCHING
- Datasheets
- FDS86106

N-Channel Tape & Reel (TR) 105m Ω @ 3.4A, 10V ±20V 208pF @ 50V 4nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS86106 Description
Fairchild Semiconductor's innovative Power Trench? technology produces this N-Channel MOSFET, which has been tuned for rDS(on), switching performance, and robustness.
FDS86106 Features
-
In a commonly used surface mount package, high power and current han dli ng capacity
-
UIL Tested to the Ninety-Nineth Percentile
-
RoHS Complia nt is an acronym for "Restriction of Hazardous Substances" (RoHS).
FDS86106 Applications
-
Synchronous Rectifier (Synchronous Rectifier)
-
Bridge Topology's Primary Switch
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