FDS86140

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Mfr.Part #
FDS86140
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 100V 11.2A 8SOIC
Stock
37,168
In Stock :
37,168

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Weight :
130mg
Pbfree Code :
yes
Fall Time (Typ) :
4.8 ns
Gate to Source Voltage (Vgs) :
20V
ECCN Code :
EAR99
Length :
4mm
Power Dissipation :
5W
Turn On Delay Time :
13.7 ns
Number of Pins :
8
Feedback Cap-Max (Crss) :
30 pF
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Width :
5mm
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Transistor Element Material :
SILICON
Additional Feature :
ULTRA-LOW RESISTANCE
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Element Configuration :
Single
JESD-609 Code :
e4
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Power Dissipation-Max :
2.5W Ta 5W Tc
Rise Time :
5.6ns
Rds On (Max) @ Id, Vgs :
9.8m Ω @ 11.2A, 10V
Terminal Position :
Dual
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
2580pF @ 50V
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Published :
2011
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C :
11.2A Ta
Lead Free :
Lead Free
Continuous Drain Current (ID) :
11.2A
Drain to Source Breakdown Voltage :
100V
Series :
PowerTrench®
Radiation Hardening :
No
Turn-Off Delay Time :
23 ns
Number of Terminations :
8
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
9 Weeks
Threshold Voltage :
2.7V
Height :
1.5mm
Mount :
Surface Mount
Nominal Vgs :
2.7 V
Number of Elements :
1
Datasheets
FDS86140
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS86140 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, FDS86140 pinout, FDS86140 datasheet PDF, FDS86140 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS86140 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS86140


N-Channel Tape & Reel (TR) 9.8m Ω @ 11.2A, 10V ±20V 2580pF @ 50V 41nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS86140 Description


FDS86140 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of FDS86140 is -55°C~150°C TJ and its maximum power dissipation is 5W. This N-Channel MOSFET is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness.



FDS86140 Features


  • Max rDS(on) = 9.8 m? at VGS = 10 V, ID = 11.2 A

  • Max rDS(on) = 16 m? at VGS = 6 V, ID = 9 A

  • High-performance trench technology for extremely low rDS(on)

  • High power and current handling capability in a widely used surface mount package

  • 100% UIL Tested

  • RoHS Compliant



FDS86140 Applications


  • Distribution

  • DC/DC Converters

  • Off-line UPS

  • Distributed Power Architectures and VRMs

  • Primary Switch for 24V and 48V Systems

  • High Voltage Synchronous Rectifier


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