FDS86140

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Feedback Cap-Max (Crss) :

30 pF

Height :

1.5mm

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

23 ns

JESD-609 Code :

e4

Input Capacitance (Ciss) (Max) @ Vds :

2580pF @ 50V

Mount :

Surface Mount

Weight :

130mg

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

9.8m Ω @ 11.2A, 10V

Drain to Source Breakdown Voltage :

100V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta 5W Tc

Transistor Application :

SWITCHING

Fall Time (Typ) :

4.8 ns

Additional Feature :

ULTRA-LOW RESISTANCE

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Length :

4mm

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Terminations :

8

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

11.2A Ta

Nominal Vgs :

2.7 V

Series :

PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

REACH SVHC :

No SVHC

Turn On Delay Time :

13.7 ns

Threshold Voltage :

2.7V

Power Dissipation :

5W

Packaging :

Tape and Reel (TR)

Rise Time :

5.6ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2011

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Width :

5mm

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Continuous Drain Current (ID) :

11.2A

Vgs (Max) :

±20V

Factory Lead Time :

9 Weeks