FDS8958B

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Rise Time :

6ns

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

6 ns

JESD-609 Code :

e3

Threshold Voltage :

2V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Length :

4.9mm

Current - Continuous Drain (Id) @ 25°C :

6.4A 4.5A

Pbfree Code :

yes

Series :

PowerTrench®

Max Power Dissipation :

900mW

Mount :

Surface Mount

Resistance :

26mOhm

Rds On (Max) @ Id, Vgs :

26m Ω @ 6.4A, 10V

Height :

1.575mm

Continuous Drain Current (ID) :

4.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

6.4A

Factory Lead Time :

18 Weeks

Number of Pins :

8

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 15V

Power Dissipation :

1.6W

Gate to Source Voltage (Vgs) :

25V

Terminal Position :

Dual

Turn-Off Delay Time :

17 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Width :

3.9mm

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Terminations :

8

FET Type :

N and P-Channel

ECCN Code :

EAR99

Weight :

187mg

Published :

2017