FDS8958A
- Mfr.Part #
- FDS8958A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 21,741
- In Stock :
- 21,741
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Number of Elements :
- 2
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Length :
- 5mm
- Terminal Position :
- Dual
- Height :
- 1.5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 15 hours ago)
- Nominal Vgs :
- 1.9 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Turn-Off Delay Time :
- 14 ns
- Published :
- 2007
- Current Rating :
- 7A
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Min Operating Temperature :
- -55°C
- Threshold Voltage :
- 1.9V
- Max Operating Temperature :
- 150°C
- Fall Time (Typ) :
- 9 ns
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 7A
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- Logic Level Gate
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Drain Current-Max (Abs) (ID) :
- 7A
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Factory Lead Time :
- 18 Weeks
- FET Type :
- N and P-Channel
- Dual Supply Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Max Power Dissipation :
- 2W
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Resistance :
- 28mOhm
- Power Dissipation :
- 2W
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 7A, 10V
- Number of Terminations :
- 8
- Rise Time :
- 13ns
- Radiation Hardening :
- No
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mounting Type :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- PowerTrench®
- Terminal Form :
- Gull wing
- Width :
- 4mm
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 575pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 7A 5A
- Power - Max :
- 900mW
- Datasheets
- FDS8958A
FDS8958A Documents

FDS8958A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS8958A Description
The FDS8958A is a 30V Dual N-channel and P-channel PowerTrench? MOSFET that has been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.
FDS8958A Features
-
Fast switching speed
-
High power and handling capability in a widely used surface mount package
-
· Q1: N-Channel
-
7.0A, 30V RDS(on) = 0.028W @ VGS = 10V
-
RDS(on) = 0.040W @ VGS = 4.5V
-
· Q2: P-Channel
-
-5A, -30V RDS(on) = 0.052W @ VGS = -10V
-
RDS(on) = 0.080W @ VGS = -4.5V
FDS8958A Applications
-
Battery powered applications
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