FDS8928A
- Mfr.Part #
- FDS8928A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V/20V 8SOIC
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A 4A
- Turn-Off Delay Time :
- 260 ns
- Nominal Vgs :
- 670 mV
- Continuous Drain Current (ID) :
- 5.5A
- Rise Time :
- 23ns
- Resistance :
- 30mOhm
- Terminal Form :
- Gull wing
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 10V
- FET Feature :
- Logic Level Gate
- Length :
- 5mm
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Weight :
- 230.4mg
- Pbfree Code :
- yes
- Number of Terminations :
- 8
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- -20V
- REACH SVHC :
- No SVHC
- Height :
- 1.5mm
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 5.5A, 4.5V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 2
- Drain to Source Voltage (Vdss) :
- 30V 20V
- Current Rating :
- 5.5A
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 2W
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Width :
- 4mm
- Contact Plating :
- Tin
- Max Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- ECCN Code :
- EAR99
- Threshold Voltage :
- 670mV
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 8V
- Power - Max :
- 900mW
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 90 ns
- Datasheets
- FDS8928A
FDS8928A Documents

FDS8928A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS8928A Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using proprietary high cell density DMOS technology. This high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.
FDS8928A Features
N-Channel
5.5A, 30V
Max. RDS(on) = 30 mΩ at VGS = 4.5 V,
Max. RDS(on) = 38 mΩ at VGS = 2.5 V
P-Channel
-4A, -20V
Max. RDS(on) = 55 mΩ at VGS = -4.5 V
Max. RDS(on) = 72 mΩ at VGS = -2.5 V
High density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package
Dual (N & P-Channel) MOSFET in surface mount package
Applications
This product is general usage and suitable for many different applications.
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