FDS8926A

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.5A, 4.5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

DS Breakdown Voltage-Min :

30V

Pin Count :

8

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Power - Max :

900mW

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Terminal Finish :

MATTE TIN

FET Feature :

Logic Level Gate

JESD-30 Code :

R-PDSO-G8

Terminal Form :

Gull wing

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

20A

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.03Ohm

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 10V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

5.5A

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

5.5A