FDS89161

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

4V @ 250µA

Power - Max :

1.6W

Width :

5mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Standard

Rise Time :

1.3ns

Mounting Type :

Surface Mount

Number of Pins :

8

Number of Elements :

2

Turn-Off Delay Time :

7.3 ns

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

2.7A

FET Type :

2 N-Channel (Dual)

Length :

4mm

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 50V

Threshold Voltage :

3V

Factory Lead Time :

11 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

REACH SVHC :

No SVHC

Turn On Delay Time :

4.2 ns

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.7A, 10V

Power Dissipation :

3.1W

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Transistor Application :

SWITCHING

Weight :

187mg

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

ECCN Code :

EAR99

Height :

1.5mm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Element Configuration :

Dual

Max Power Dissipation :

31W

Drain-source On Resistance-Max :

0.105Ohm

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

4.1nC @ 10V

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Radiation Hardening :

No

Series :

PowerTrench®

Lead Free :

Lead Free

Feedback Cap-Max (Crss) :

5 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

1.9 ns