FDS89141
- Mfr.Part #
- FDS89141
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 100V 3.5A 8SOIC
- Stock
- 15,748
- In Stock :
- 15,748
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 62mOhm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Rise Time :
- 1.4ns
- Drain to Source Voltage (Vdss) :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Width :
- 5mm
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Published :
- 2010
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 31W
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Series :
- PowerTrench®
- Avalanche Energy Rating (Eas) :
- 37 mJ
- Power - Max :
- 1.6W
- FET Feature :
- Logic Level Gate
- Threshold Voltage :
- 3.1V
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 2.2 ns
- FET Type :
- 2 N-Channel (Dual)
- Factory Lead Time :
- 11 Weeks
- Turn-Off Delay Time :
- 9.8 ns
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 8
- Power Dissipation :
- 31W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Height :
- 1.5mm
- Element Configuration :
- Dual
- Drain to Source Breakdown Voltage :
- 100V
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Number of Elements :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 7.1nC @ 10V
- Turn On Delay Time :
- 5 ns
- Weight :
- 187mg
- Rds On (Max) @ Id, Vgs :
- 62m Ω @ 3.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 3.5A
- Input Capacitance (Ciss) (Max) @ Vds :
- 398pF @ 50V
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Length :
- 4mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- FDS89141

FDS89141 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS89141 Description
The N-channel MOSFET is produced using an advanced Power Tritch process optimized for RDS (conduction), switching performance and ruggedness.
FDS89141 Features
Shielded Gate MOSFET Technology
Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A
Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A
High Performance Trench Technology for Extremely Low rDS(on)
High Power and Current Handling Capability in a Widely Used Surface Mount Package
100% UIL Tested
RoHS Compliant
FDS89141 Applications
This product is general usage and suitable for many different applications.
Synchronous Rectifier
Primary Switch for Bridge Topology
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