FDS89141

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Mfr.Part #
FDS89141
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET 2N-CH 100V 3.5A 8SOIC
Stock
15,748
In Stock :
15,748

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
RoHS Status :
ROHS3 Compliant
Resistance :
62mOhm
Vgs(th) (Max) @ Id :
4V @ 250µA
Mount :
Surface Mount
JESD-609 Code :
e3
Rise Time :
1.4ns
Drain to Source Voltage (Vdss) :
100V
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
Width :
5mm
Transistor Application :
SWITCHING
Radiation Hardening :
No
Published :
2010
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
Max Power Dissipation :
31W
Lead Free :
Lead Free
Pbfree Code :
yes
Series :
PowerTrench®
Avalanche Energy Rating (Eas) :
37 mJ
Power - Max :
1.6W
FET Feature :
Logic Level Gate
Threshold Voltage :
3.1V
Mounting Type :
Surface Mount
Fall Time (Typ) :
2.2 ns
FET Type :
2 N-Channel (Dual)
Factory Lead Time :
11 Weeks
Turn-Off Delay Time :
9.8 ns
Number of Pins :
8
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
8
Power Dissipation :
31W
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Height :
1.5mm
Element Configuration :
Dual
Drain to Source Breakdown Voltage :
100V
Additional Feature :
ULTRA-LOW RESISTANCE
Number of Elements :
2
Gate Charge (Qg) (Max) @ Vgs :
7.1nC @ 10V
Turn On Delay Time :
5 ns
Weight :
187mg
Rds On (Max) @ Id, Vgs :
62m Ω @ 3.5A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
3.5A
Input Capacitance (Ciss) (Max) @ Vds :
398pF @ 50V
Terminal Finish :
Tin (Sn)
Terminal Form :
Gull wing
Length :
4mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
FDS89141
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDS89141 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS89141 pinout, FDS89141 datasheet PDF, FDS89141 amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDS89141 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS89141


FDS89141 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDS89141   Description


 The N-channel MOSFET is produced using an advanced Power Tritch process optimized for RDS (conduction), switching performance and ruggedness.

 

FDS89141     Features

 

Shielded Gate MOSFET Technology

Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A

Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A

High Performance Trench Technology for Extremely Low rDS(on)

High Power and Current Handling Capability in a Widely Used Surface Mount Package

100% UIL Tested

RoHS Compliant

 

 FDS89141     Applications


This product is general usage and suitable for many different applications.

Synchronous Rectifier

Primary Switch for Bridge Topology

 





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