FDP047AN08A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Number of Elements :

1

Turn-Off Delay Time :

40 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Series :

PowerTrench®

Radiation Hardening :

No

Turn On Delay Time :

18 ns

Continuous Drain Current (ID) :

80A

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Resistance :

4.7MOhm

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Number of Pins :

3

Current Rating :

80A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Length :

10.67mm

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 80A, 10V

Gate Charge (Qg) (Max) @ Vgs :

138nC @ 10V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

75V

Height :

9.4mm

Voltage - Rated DC :

75V

FET Type :

N-Channel

Power Dissipation :

310W

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Power Dissipation-Max :

310W Tc

Weight :

1.8g

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

475 mJ

Case Connection :

DRAIN

Element Configuration :

Single

Mounting Type :

Through Hole

Rise Time :

88ns

Package / Case :

TO-220-3

Pbfree Code :

yes

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

45 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Contact Plating :

Tin

Width :

4.83mm