FDP032N08

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Width :

4.7mm

Mounting Type :

Through Hole

Package / Case :

TO-220-3

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Packaging :

Tube

Fall Time (Typ) :

121 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Height :

15.38mm

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Length :

10.1mm

Input Capacitance (Ciss) (Max) @ Vds :

15160pF @ 25V

Published :

2004

Pulsed Drain Current-Max (IDM) :

940A

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Turn-Off Delay Time :

335 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

375W

Element Configuration :

Single

Number of Terminations :

3

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

75V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

JEDEC-95 Code :

TO-220AB

Threshold Voltage :

3.5V

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 75A, 10V

Transistor Application :

SWITCHING

Resistance :

3.2mOhm

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

9 Weeks

Transistor Element Material :

SILICON

Series :

PowerTrench®

Continuous Drain Current (ID) :

235A

Power Dissipation-Max :

375W Tc

Weight :

2.421g

Rise Time :

191ns

Turn On Delay Time :

230 ns