FDP032N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Resistance :

3.2mOhm

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

15.38mm

Qualification Status :

Not Qualified

Packaging :

Tube

Number of Pins :

3

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Continuous Drain Current (ID) :

235A

Length :

10.1mm

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

940A

Vgs (Max) :

±20V

Threshold Voltage :

3.5V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

20V

Series :

PowerTrench®

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

75V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation :

375W

Fall Time (Typ) :

121 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

230 ns

Mounting Type :

Through Hole

Turn-Off Delay Time :

335 ns

Number of Terminations :

3

Factory Lead Time :

9 Weeks

Mount :

Through Hole

ECCN Code :

EAR99

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

15160pF @ 25V

Rise Time :

191ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Pbfree Code :

yes

Weight :

2.421g

JEDEC-95 Code :

TO-220AB

Width :

4.7mm

Power Dissipation-Max :

375W Tc

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V