FDP032N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

191ns

Power Dissipation :

375W

RoHS Status :

ROHS3 Compliant

Published :

2004

Turn On Delay Time :

230 ns

Weight :

2.421g

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

15160pF @ 25V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

75V

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

9 Weeks

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Terminations :

3

Height :

15.38mm

Mount :

Through Hole

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Mounting Type :

Through Hole

Length :

10.1mm

Series :

PowerTrench®

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

235A

Width :

4.7mm

Package / Case :

TO-220-3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Turn-Off Delay Time :

335 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

940A

Threshold Voltage :

3.5V

Resistance :

3.2mOhm

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

375W Tc

FET Type :

N-Channel

Element Configuration :

Single

Qualification Status :

Not Qualified

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 75A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

121 ns

ECCN Code :

EAR99