FDP027N08B-F102

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 100A, 10V

Power Dissipation-Max :

246W Tc

Radiation Hardening :

No

Element Configuration :

Single

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

FET Type :

N-Channel

Number of Elements :

1

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

178nC @ 10V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

223A

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

13530pF @ 40V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Rise Time :

66ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

246W

Weight :

1.8g

Turn-Off Delay Time :

87 ns

Turn On Delay Time :

47 ns

Factory Lead Time :

9 Weeks

Series :

PowerTrench®

Fall Time (Typ) :

41 ns