FDP027N08B-F102
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- Mfr.Part #
- FDP027N08B-F102
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 120A TO220-3
- Stock
- 740
- In Stock ：
- 740
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Weight :
- 1.8g
- Power Dissipation-Max :
- 246W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 66ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 223A
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain to Source Breakdown Voltage :
- 80V
- Turn-Off Delay Time :
- 87 ns
- Series :
- PowerTrench®
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 178nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 246W
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 41 ns
- Factory Lead Time :
- 9 Weeks
- Turn On Delay Time :
- 47 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 13530pF @ 40V
- Rds On (Max) @ Id, Vgs :
- 2.7m Ω @ 100A, 10V
- Datasheets
- FDP027N08B-F102
N-Channel Tube 2.7m Ω @ 100A, 10V ±20V 13530pF @ 40V 178nC @ 10V TO-220-3
FDP027N08B-F102 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13530pF @ 40V.This device conducts a continuous drain current (ID) of 223A, which is the maximum continuous current transistor can conduct.Using VGS=80V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 80V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 87 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 47 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FDP027N08B-F102 Features
a continuous drain current (ID) of 223A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 87 ns
FDP027N08B-F102 Applications
There are a lot of ON Semiconductor
FDP027N08B-F102 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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