FDP030N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

772A

Continuous Drain Current (ID) :

193A

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Factory Lead Time :

9 Weeks

Length :

10.1mm

Height :

15.38mm

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

9815pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

39 ns

Pbfree Code :

yes

Turn-Off Delay Time :

54 ns

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Fall Time (Typ) :

33 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Mount :

Through Hole

JESD-609 Code :

e3

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

151nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Power Dissipation-Max :

231W Tc

Weight :

2.421g

Series :

PowerTrench®

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 75A, 10V

Width :

4.7mm

Rise Time :

178ns

Power Dissipation :

231W

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Packaging :

Tube