FDP030N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Width :

4.7mm

Length :

10.1mm

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Factory Lead Time :

9 Weeks

Transistor Application :

SWITCHING

Weight :

2.421g

Pbfree Code :

yes

Packaging :

Tube

Transistor Element Material :

SILICON

Turn On Delay Time :

39 ns

Height :

15.38mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

120A Tc

JESD-609 Code :

e3

Number of Pins :

3

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

9815pF @ 25V

ECCN Code :

EAR99

Package / Case :

TO-220-3

Power Dissipation-Max :

231W Tc

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 75A, 10V

Published :

2013

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Power Dissipation :

231W

Pulsed Drain Current-Max (IDM) :

772A

Lead Free :

Lead Free

Fall Time (Typ) :

33 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

151nC @ 10V

Number of Terminations :

3

Continuous Drain Current (ID) :

193A

Turn-Off Delay Time :

54 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Drain to Source Breakdown Voltage :

60V

Rise Time :

178ns