FDP023N08B

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N-Channel

Vgs (Max) :

±20V

Rise Time :

71ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

2.346g

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Rds On (Max) @ Id, Vgs :

2.35m Ω @ 75A, 10V

Vgs(th) (Max) @ Id :

3.8V @ 250μA

Number of Elements :

1

Power Dissipation :

245W

Drain to Source Breakdown Voltage :

75V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Turn-Off Delay Time :

111 ns

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

13765pF @ 37.5V

Turn On Delay Time :

41 ns

Element Configuration :

Single

Fall Time (Typ) :

56 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

120A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mounting Type :

Through Hole

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Radiation Hardening :

No

Factory Lead Time :

17 Weeks

Series :

PowerTrench®

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

245W Tc

Mount :

Through Hole