FDP023N08B
- Mfr.Part #
- FDP023N08B
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- 75V N-CHANNEL MOSFET
- Stock
- 21,759
- In Stock :
- 21,759
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Turn-Off Delay Time :
- 111 ns
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 75V
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 17 Weeks
- Weight :
- 2.346g
- Mount :
- Through Hole
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 2.35m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id :
- 3.8V @ 250μA
- Power Dissipation :
- 245W
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 13765pF @ 37.5V
- Continuous Drain Current (ID) :
- 120A
- Pbfree Code :
- yes
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 245W Tc
- Fall Time (Typ) :
- 56 ns
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Turn On Delay Time :
- 41 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Rise Time :
- 71ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Datasheets
- FDP023N08B
N-Channel Tube 2.35m Ω @ 75A, 10V ±20V 13765pF @ 37.5V 195nC @ 10V TO-220-3
FDP023N08B-F102 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13765pF @ 37.5V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Using VGS=75V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 75V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 111 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 41 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FDP023N08B-F102 Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 111 ns
FDP023N08B-F102 Applications
There are a lot of ON Semiconductor
FDP023N08B-F102 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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