FDP023N08B

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Mfr.Part #
FDP023N08B
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
75V N-CHANNEL MOSFET
Stock
21,759
In Stock :
21,759

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Arrays
Turn-Off Delay Time :
111 ns
Radiation Hardening :
No
Drain to Source Breakdown Voltage :
75V
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
17 Weeks
Weight :
2.346g
Mount :
Through Hole
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
2.35m Ω @ 75A, 10V
Vgs(th) (Max) @ Id :
3.8V @ 250μA
Power Dissipation :
245W
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
13765pF @ 37.5V
Continuous Drain Current (ID) :
120A
Pbfree Code :
yes
Series :
PowerTrench®
Power Dissipation-Max :
245W Tc
Fall Time (Typ) :
56 ns
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Turn On Delay Time :
41 ns
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Rise Time :
71ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Package / Case :
TO-220-3
Number of Elements :
1
Datasheets
FDP023N08B
Introducing Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDP023N08B from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, FDP023N08B pinout, FDP023N08B datasheet PDF, FDP023N08B amp .Beyond Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDP023N08B ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 2.35m Ω @ 75A, 10V ±20V 13765pF @ 37.5V 195nC @ 10V TO-220-3

FDP023N08B-F102 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13765pF @ 37.5V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Using VGS=75V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 75V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 111 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 41 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FDP023N08B-F102 Features


a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 111 ns


FDP023N08B-F102 Applications


There are a lot of ON Semiconductor
FDP023N08B-F102 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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