FDP025N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

324ns

Height :

15.7mm

Published :

2013

Weight :

2.421g

Element Configuration :

Single

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Factory Lead Time :

9 Weeks

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

14885pF @ 25V

Mounting Type :

Through Hole

Nominal Vgs :

3.5 V

Package / Case :

TO-220-3

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

2.5MOhm

Fall Time (Typ) :

250 ns

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

226nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 75A, 10V

Threshold Voltage :

3.5V

Turn-Off Delay Time :

348 ns

Power Dissipation :

395W

Power Dissipation-Max :

395W Tc

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mount :

Through Hole

Pbfree Code :

yes

Number of Pins :

3

Length :

9.9mm

REACH SVHC :

No SVHC

Width :

4.5mm

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Continuous Drain Current (ID) :

265A

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

134 ns

Lead Free :

Lead Free

Number of Elements :

1