FDN371N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

815pF @ 10V

Terminal Form :

Gull wing

Radiation Hardening :

No

Current Rating :

2.5A

Power Dissipation-Max :

500mW Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation :

500mW

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

12V

Element Configuration :

Single

Number of Terminations :

3

Lead Free :

Lead Free

Rise Time :

9ns

Drain-source On Resistance-Max :

0.05Ohm

Vgs (Max) :

±12V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Pins :

3

Mounting Type :

Surface Mount

Fall Time (Typ) :

9 ns

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

7 ns

Turn-Off Delay Time :

17 ns

Terminal Position :

Dual

Published :

2008

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

10.7nC @ 4.5V

Series :

PowerTrench®

Voltage - Rated DC :

20V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Continuous Drain Current (ID) :

2.5A

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.5A, 4.5V