FDN327N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

70m Ω @ 2A, 4.5V

Voltage - Rated DC :

20V

Drain Current-Max (Abs) (ID) :

2A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Threshold Voltage :

700mV

Number of Elements :

1

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current Rating :

2A

Turn-Off Delay Time :

14 ns

Mounting Type :

Surface Mount

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

20V

FET Type :

N-Channel

Length :

2.92mm

RoHS Status :

ROHS3 Compliant

Height :

1.22mm

Packaging :

Tape and Reel (TR)

Resistance :

70mOhm

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 4.5V

Turn On Delay Time :

6 ns

Fall Time (Typ) :

6.5 ns

Factory Lead Time :

10 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

423pF @ 10V

Nominal Vgs :

700 mV

Rise Time :

6.5ns

Lead Free :

Lead Free

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Continuous Drain Current (ID) :

2A

Terminal Form :

Gull wing

Number of Pins :

3

Contact Plating :

Tin

Width :

1.4mm

Weight :

30mg

Number of Terminations :

3

Pbfree Code :

yes

Published :

2017

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

8V

Vgs (Max) :

±8V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Power Dissipation :

500mW

REACH SVHC :

No SVHC

Power Dissipation-Max :

500mW Ta