FDN327N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

2A

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

500mW Ta

Turn-Off Delay Time :

14 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

FET Type :

N-Channel

Published :

2017

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

6 ns

Voltage - Rated DC :

20V

Gate to Source Voltage (Vgs) :

8V

Height :

1.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

2A

Series :

PowerTrench®

Transistor Application :

SWITCHING

Terminal Position :

Dual

ECCN Code :

EAR99

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Current Rating :

2A

Width :

1.4mm

Fall Time (Typ) :

6.5 ns

Rise Time :

6.5ns

Radiation Hardening :

No

Mount :

Surface Mount

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Threshold Voltage :

700mV

Input Capacitance (Ciss) (Max) @ Vds :

423pF @ 10V

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Channels :

1

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

70m Ω @ 2A, 4.5V

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Terminal Form :

Gull wing

Number of Terminations :

3

Resistance :

70mOhm

Element Configuration :

Single

Length :

2.92mm

Power Dissipation :

500mW

Drain to Source Breakdown Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 4.5V

Nominal Vgs :

700 mV

Weight :

30mg

Number of Pins :

3