FDN327N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Published :

2017

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 4.5V

Terminal Form :

Gull wing

Power Dissipation :

500mW

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

6 ns

Contact Plating :

Tin

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Length :

2.92mm

Current Rating :

2A

Number of Terminations :

3

Fall Time (Typ) :

6.5 ns

Vgs (Max) :

±8V

Turn-Off Delay Time :

14 ns

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Pbfree Code :

yes

JESD-609 Code :

e3

Rise Time :

6.5ns

Gate to Source Voltage (Vgs) :

8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Series :

PowerTrench®

Resistance :

70mOhm

Drain to Source Breakdown Voltage :

20V

Nominal Vgs :

700 mV

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain Current-Max (Abs) (ID) :

2A

Width :

1.4mm

Continuous Drain Current (ID) :

2A

Input Capacitance (Ciss) (Max) @ Vds :

423pF @ 10V

Height :

1.22mm

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

Terminal Position :

Dual

Mount :

Surface Mount

Threshold Voltage :

700mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

70m Ω @ 2A, 4.5V

Weight :

30mg

Voltage - Rated DC :

20V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Transistor Element Material :

SILICON

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation-Max :

500mW Ta

Number of Channels :

1

ECCN Code :

EAR99