FDN327N
- Mfr.Part #
- FDN327N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 2A SUPERSOT3
- Stock
- 5,755
- In Stock :
- 5,755
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 2A, 4.5V
- Vgs (Max) :
- ±8V
- Weight :
- 30mg
- Gate Charge (Qg) (Max) @ Vgs :
- 6.3nC @ 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 2.92mm
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 20V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 2A
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Nominal Vgs :
- 700 mV
- Factory Lead Time :
- 10 Weeks
- Height :
- 1.22mm
- Voltage - Rated DC :
- 20V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation-Max :
- 500mW Ta
- Gate to Source Voltage (Vgs) :
- 8V
- Continuous Drain Current (ID) :
- 2A
- Terminal Position :
- Dual
- Turn-Off Delay Time :
- 14 ns
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 2A
- Rise Time :
- 6.5ns
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Published :
- 2017
- Max Junction Temperature (Tj) :
- 150°C
- Fall Time (Typ) :
- 6.5 ns
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Turn On Delay Time :
- 6 ns
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 423pF @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.4mm
- Threshold Voltage :
- 700mV
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Resistance :
- 70mOhm
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Number of Terminations :
- 3
- Power Dissipation :
- 500mW
- Terminal Form :
- Gull wing
- Datasheets
- FDN327N

N-Channel Tape & Reel (TR) 70m Ω @ 2A, 4.5V ±8V 423pF @ 10V 6.3nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN327N Description
ON Semiconductor's high voltage PowerTrench technology is used in this FDN327N MOSFET. It has been designed with power management in mind.
FDN327N Features
-
a low entry fee (4.5 nC typical)
-
a quick switching rate
-
For exceptionally low RDS, high-performance trench technology is used (ON)
FDN327N Applications
-
A load switch is a device that allows you to transition from one mode to another.
-
Protection for the batteries
-
Management of electrical energy
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