FDN336P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-20V

Dual Supply Voltage :

-20V

Vgs (Max) :

±8V

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Rise Time :

12ns

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

JESD-609 Code :

e3

Radiation Hardening :

No

Factory Lead Time :

10 Weeks

Length :

2.92mm

Terminal Position :

Dual

Continuous Drain Current (ID) :

1.2A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Drain to Source Breakdown Voltage :

-20V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 10V

Mount :

Surface Mount

Height :

940μm

Pbfree Code :

yes

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Power Dissipation :

500mW

Turn-Off Delay Time :

16 ns

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.3A, 4.5V

Transistor Application :

SWITCHING

Nominal Vgs :

-900 mV

Lead Free :

Lead Free

FET Type :

P-Channel

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Width :

1.4mm

Resistance :

200mOhm

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Element Configuration :

Single

Series :

PowerTrench®

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Weight :

30mg

Power Dissipation-Max :

500mW Ta

Turn On Delay Time :

7 ns

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Published :

2005

Current Rating :

-1.3A

ECCN Code :

EAR99

Threshold Voltage :

-900mV

Gate to Source Voltage (Vgs) :

8V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON