FDN308P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain to Source Voltage (Vdss) :

20V

Height :

940μm

Resistance :

125mOhm

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Width :

1.4mm

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

10 Weeks

Element Configuration :

Single

Number of Elements :

1

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Rise Time :

10ns

JESD-609 Code :

e3

Power Dissipation-Max :

500mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

341pF @ 10V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Length :

2.92mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

12 ns

Voltage - Rated DC :

-20V

Terminal Position :

Dual

FET Type :

P-Channel

Series :

PowerTrench®

Fall Time (Typ) :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-1.5A

Number of Pins :

3

Published :

2001

Drain to Source Breakdown Voltage :

-20V

Transistor Element Material :

SILICON

Weight :

30mg

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Turn On Delay Time :

8 ns

Qualification Status :

Not Qualified

Pbfree Code :

yes

Threshold Voltage :

-1V

Power Dissipation :

500mW

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 4.5V

Mount :

Surface Mount

Terminal Form :

Gull wing

ECCN Code :

EAR99

Nominal Vgs :

-1 V

Gate to Source Voltage (Vgs) :

12V

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Continuous Drain Current (ID) :

-1.5A

Rds On (Max) @ Id, Vgs :

125m Ω @ 1.5A, 4.5V