FDN306P

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Mfr.Part #
FDN306P
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 12V 2.6A SUPERSOT3
Stock
17,836
In Stock :
17,836

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±8V
Width :
1.4mm
Turn On Delay Time :
11 ns
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
2.6A Ta
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Mounting Type :
Surface Mount
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
8V
Input Capacitance (Ciss) (Max) @ Vds :
1138pF @ 6V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
-12V
FET Type :
P-Channel
Factory Lead Time :
10 Weeks
Current :
26A
Voltage - Rated DC :
-12V
Voltage :
12V
RoHS Status :
ROHS3 Compliant
Nominal Vgs :
-600 mV
REACH SVHC :
No SVHC
Radiation Hardening :
No
Lead Free :
Lead Free
Drain to Source Resistance :
40mOhm
Series :
PowerTrench®
Turn-Off Delay Time :
38 ns
Drain to Source Voltage (Vdss) :
12V
Termination :
SMD/SMT
Rise Time :
10ns
Rds On (Max) @ Id, Vgs :
40mOhm @ 2.6A, 4.5V
Length :
2.92mm
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 4.5V
Published :
2001
Rds On Max :
40 mΩ
Supplier Device Package :
SuperSOT-3
Min Operating Temperature :
-55°C
Resistance :
40mOhm
Power Dissipation-Max :
500mW Ta
Threshold Voltage :
-600mV
Continuous Drain Current (ID) :
-2.6A
Contact Plating :
Tin
Dual Supply Voltage :
-12V
Height :
940μm
Fall Time (Typ) :
10 ns
Current Rating :
-2.6A
Max Operating Temperature :
150°C
Package / Case :
TO-236-3, SC-59, SOT-23-3
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Input Capacitance :
1.138nF
Power Dissipation :
500mW
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Element Configuration :
Single
Introducing Transistors - FETs, MOSFETs - Single onsemi FDN306P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Voltage:12V, Package / Case:TO-236-3, SC-59, SOT-23-3, FDN306P pinout, FDN306P datasheet PDF, FDN306P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDN306P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDN306P


P-Channel Tape & Reel (TR) 40mOhm @ 2.6A, 4.5V ±8V 1138pF @ 6V 17nC @ 4.5V 12V TO-236-3, SC-59, SOT-23-3

FDN306P Description


Fairchild's innovative low voltage PowerTrench technology is used in this FDN306P P-Channel 1.8V specified MOSFET. It's been designed with battery power management in mind.


FDN306P Features


?Quick switching time

?Extremely low RDs with high-performance trench technology (ON)

?In the same footprint, supersOTTM -3 has a lower RDs(ON) and a 30% higher power handling capability than sOT23.


FDN306P Applications


Battery administration

Switch to load

Battery security

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