FDN302P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-20V

Length :

2.92mm

Published :

2000

Nominal Vgs :

-1 V

Voltage - Rated DC :

-20V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

Resistance :

55mOhm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Turn On Delay Time :

13 ns

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Terminal Position :

Dual

Lead Free :

Lead Free

Threshold Voltage :

-1V

Rise Time :

11ns

Width :

1.4mm

Rds On (Max) @ Id, Vgs :

55m Ω @ 2.4A, 4.5V

Factory Lead Time :

10 Weeks

Weight :

30mg

Input Capacitance (Ciss) (Max) @ Vds :

882pF @ 10V

Current Rating :

-2.4A

Transistor Application :

SWITCHING

Dual Supply Voltage :

-20V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

25 ns

ECCN Code :

EAR99

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Vgs (Max) :

±12V

Height :

940μm

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Power Dissipation :

500mW

Min Breakdown Voltage :

20V

Mount :

Surface Mount

Fall Time (Typ) :

11 ns

Continuous Drain Current (ID) :

-2.4A

Series :

PowerTrench®

Power Dissipation-Max :

500mW Ta

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Form :

Gull wing

Number of Elements :

1

REACH SVHC :

No SVHC

Element Configuration :

Single