FDN337N
- Mfr.Part #
- FDN337N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.2A SUPERSOT3
- Stock
- 14,838
- In Stock :
- 14,838
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 2.92mm
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 10 Weeks
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Max Junction Temperature (Tj) :
- 150°C
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 4 ns
- Height :
- 1.12mm
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 1998
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 2A
- Termination :
- SMD/SMT
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Rise Time :
- 10ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 30mg
- ECCN Code :
- EAR99
- Width :
- 3.05mm
- Continuous Drain Current (ID) :
- 2.2A
- Dual Supply Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Element Configuration :
- Single
- Resistance :
- 65mOhm
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 4 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- Vgs (Max) :
- ±8V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 17 ns
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Power Dissipation-Max :
- 500mW Ta
- Power Dissipation :
- 500mW
- Nominal Vgs :
- 700 mV
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 700mV
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 10V
- Gate to Source Voltage (Vgs) :
- 8V
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 2.2A, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Current Rating :
- 2.2A
- Datasheets
- FDN337N

N-Channel Tape & Reel (TR) 65m Ω @ 2.2A, 4.5V ±8V 300pF @ 10V 9nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN337N Description
FDN337N N-Channel MOSFET was created with a distinctive technology that provides the most efficient RDS(on). FDN337N MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDN337N ON Semiconductor is a general-purpose device and can be used in a variety of applications.
FDN337N Features
High-performance trench technology
Extended VGSS range for battery applications
RoHS compliant
High power and current handling capability
FDN337N Applications
Synchronous & Non-Synchronous Buck
Control Switch
Inverter
Load Switch
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