FDN337N
- Mfr.Part #
- FDN337N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.2A SUPERSOT3
- Stock
- 14,838
- In Stock :
- 14,838
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Voltage - Rated DC :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 2.2A
- Height :
- 1.12mm
- Length :
- 2.92mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 17 ns
- Max Junction Temperature (Tj) :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 8V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Dual Supply Voltage :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Power Dissipation :
- 500mW
- Operating Mode :
- ENHANCEMENT MODE
- Termination :
- SMD/SMT
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 2.2A, 4.5V
- Power Dissipation-Max :
- 500mW Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Fall Time (Typ) :
- 4 ns
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Width :
- 3.05mm
- Current Rating :
- 2.2A
- Resistance :
- 65mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 10 Weeks
- Weight :
- 30mg
- Nominal Vgs :
- 700 mV
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 2A
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Turn On Delay Time :
- 4 ns
- Rise Time :
- 10ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 10V
- Vgs (Max) :
- ±8V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Published :
- 1998
- Threshold Voltage :
- 700mV
- Datasheets
- FDN337N

N-Channel Tape & Reel (TR) 65m Ω @ 2.2A, 4.5V ±8V 300pF @ 10V 9nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN337N Description
FDN337N N-Channel MOSFET was created with a distinctive technology that provides the most efficient RDS(on). FDN337N MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDN337N ON Semiconductor is a general-purpose device and can be used in a variety of applications.
FDN337N Features
High-performance trench technology
Extended VGSS range for battery applications
RoHS compliant
High power and current handling capability
FDN337N Applications
Synchronous & Non-Synchronous Buck
Control Switch
Inverter
Load Switch
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