FDN337N
- Mfr.Part #
- FDN337N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.2A SUPERSOT3
- Stock
- 14,838
- In Stock :
- 14,838
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 2.2A
- Max Junction Temperature (Tj) :
- 150°C
- Rise Time :
- 10ns
- Turn On Delay Time :
- 4 ns
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Channels :
- 1
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Weight :
- 30mg
- Factory Lead Time :
- 10 Weeks
- Termination :
- SMD/SMT
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 500mW Ta
- Current Rating :
- 2.2A
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 10V
- Threshold Voltage :
- 700mV
- Gate to Source Voltage (Vgs) :
- 8V
- Number of Pins :
- 3
- Fall Time (Typ) :
- 4 ns
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Width :
- 3.05mm
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.12mm
- Voltage - Rated DC :
- 30V
- Resistance :
- 65mOhm
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Turn-Off Delay Time :
- 17 ns
- Packaging :
- Tape and Reel (TR)
- Published :
- 1998
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Dual Supply Voltage :
- 30V
- Pbfree Code :
- yes
- Vgs (Max) :
- ±8V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 2.2A, 4.5V
- Nominal Vgs :
- 700 mV
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 2A
- Length :
- 2.92mm
- Mount :
- Surface Mount
- Power Dissipation :
- 500mW
- Datasheets
- FDN337N

N-Channel Tape & Reel (TR) 65m Ω @ 2.2A, 4.5V ±8V 300pF @ 10V 9nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN337N Description
FDN337N N-Channel MOSFET was created with a distinctive technology that provides the most efficient RDS(on). FDN337N MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDN337N ON Semiconductor is a general-purpose device and can be used in a variety of applications.
FDN337N Features
High-performance trench technology
Extended VGSS range for battery applications
RoHS compliant
High power and current handling capability
FDN337N Applications
Synchronous & Non-Synchronous Buck
Control Switch
Inverter
Load Switch
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