FDN335N
- Mfr.Part #
- FDN335N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 1.7A SUPERSOT3
- Stock
- 1,629
- In Stock :
- 1,629
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 500mW Ta
- Voltage - Rated DC :
- 20V
- Transistor Application :
- SWITCHING
- Resistance :
- 70mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Ta
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Height :
- 940μm
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Transistor Element Material :
- SILICON
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Dual Supply Voltage :
- 25V
- Fall Time (Typ) :
- 8.5 ns
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 5 ns
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 1.7A, 4.5V
- FET Type :
- N-Channel
- Power Dissipation :
- 500mW
- Element Configuration :
- Single
- Manufacturer Package Identifier :
- CASE 527AG-01
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Published :
- 1999
- Mount :
- Surface Mount
- Rise Time :
- 8.5ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 2.92mm
- Nominal Vgs :
- 800 mV
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 1.7A
- Drain to Source Breakdown Voltage :
- 20V
- ECCN Code :
- EAR99
- Current :
- 17A
- Vgs (Max) :
- ±8V
- Width :
- 3.05mm
- Termination :
- SMD/SMT
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 10 Weeks
- Number of Pins :
- 3
- Number of Elements :
- 1
- Voltage :
- 20V
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 10V
- Turn-Off Delay Time :
- 11 ns
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Threshold Voltage :
- 900mV
- Continuous Drain Current (ID) :
- 1.7A
- Gate to Source Voltage (Vgs) :
- 8V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 4.5V
- Datasheets
- FDN335N

N-Channel Tape & Reel (TR) 70m Ω @ 1.7A, 4.5V ±8V 310pF @ 10V 5nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN335N Description
The ONSEMI FDN335N is a 2.5V N-channel MOSFET that employs the innovative PowerTrench? technology, which has been specifically optimised to minimise on-state resistance while maintaining a low gate charge for excellent switching performance.
FDN335N Features
-
1.7 A, 20 V
-
RDS(on) = 0.07 |@ VGS = 4.5 V
-
RDS(on) = 0.100 | @ VGS = 2.5 V
-
Low gate charge (3.5nC typical).
-
High-performance trench technology for highly low RDS(ON)
-
High power and current handling capability
FDN335N Applications
-
This product is general usage and suitable for many different applications.
-
DC/DC converter
-
Load Switch
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