FDN360P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-30V

FET Type :

P-Channel

Terminal Position :

Dual

Power Dissipation :

500mW

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn-Off Delay Time :

11 ns

Turn On Delay Time :

6 ns

Max Junction Temperature (Tj) :

150°C

Series :

PowerTrench®

Mount :

Surface Mount

Fall Time (Typ) :

6 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

3

Number of Pins :

3

Lead Free :

Lead Free

Number of Channels :

1

Vgs (Max) :

±20V

Rise Time :

13ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

-30V

Transistor Application :

SWITCHING

Length :

2.92mm

Weight :

30mg

Power Dissipation-Max :

500mW Ta

Voltage - Rated DC :

-30V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Drain Current-Max (Abs) (ID) :

2A

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Element Configuration :

Single

Pbfree Code :

yes

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

2A

Rds On (Max) @ Id, Vgs :

80m Ω @ 2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

1.4mm

Resistance :

80mOhm

Contact Plating :

Tin

Height :

1.22mm

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Published :

2003

Current Rating :

-2A

Factory Lead Time :

10 Weeks

Threshold Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

298pF @ 15V