FDN360P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-30V

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

30V

Series :

PowerTrench®

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

2A

Radiation Hardening :

No

Turn-Off Delay Time :

11 ns

Factory Lead Time :

10 Weeks

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Weight :

30mg

Current Rating :

-2A

Turn On Delay Time :

6 ns

Height :

1.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Dual Supply Voltage :

-30V

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Element Configuration :

Single

Mounting Type :

Surface Mount

Number of Terminations :

3

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

3

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

80m Ω @ 2A, 10V

Mount :

Surface Mount

Terminal Form :

Gull wing

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-30V

Input Capacitance (Ciss) (Max) @ Vds :

298pF @ 15V

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Rise Time :

13ns

Transistor Element Material :

SILICON

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Transistor Application :

SWITCHING

Power Dissipation-Max :

500mW Ta

Terminal Position :

Dual

Continuous Drain Current (ID) :

2A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Fall Time (Typ) :

6 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Published :

2003

JESD-609 Code :

e3

Threshold Voltage :

20V

Power Dissipation :

500mW

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Length :

2.92mm

Width :

1.4mm

Operating Temperature :

-55°C~150°C TJ

Resistance :

80mOhm

RoHS Status :

ROHS3 Compliant