FDN358P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

13 ns

REACH SVHC :

No SVHC

Turn-Off Delay Time :

12 ns

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

125m Ω @ 1.5A, 10V

Number of Pins :

3

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Height :

1.22mm

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

500mW

Drain to Source Breakdown Voltage :

-30V

Weight :

30mg

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Radiation Hardening :

No

Width :

3.05mm

Input Capacitance (Ciss) (Max) @ Vds :

182pF @ 15V

Pbfree Code :

yes

Published :

2003

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Turn On Delay Time :

5 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

1.5A

Rise Time :

13ns

ECCN Code :

EAR99

Series :

PowerTrench®

FET Type :

P-Channel

Factory Lead Time :

10 Weeks

Mount :

Surface Mount

Threshold Voltage :

-1.9V

Power Dissipation-Max :

500mW Ta

Dual Supply Voltage :

-30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.92mm

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Current Rating :

-1.5A

Terminal Form :

Gull wing

Voltage - Rated DC :

-30V

Max Junction Temperature (Tj) :

150°C

Resistance :

125mOhm

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

1

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Number of Channels :

1

Nominal Vgs :

-1.9 V

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V