FDN357N

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Mfr.Part #
FDN357N
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET N-CH 30V 1.9A SUPERSOT3
Stock
7,425
In Stock :
7,425

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
2.92mm
Package / Case :
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id :
2V @ 250μA
Radiation Hardening :
No
Turn On Delay Time :
5 ns
Min Breakdown Voltage :
30V
Voltage - Rated DC :
30V
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Element Configuration :
Single
REACH SVHC :
No SVHC
Gate Charge (Qg) (Max) @ Vgs :
5.9nC @ 5V
Nominal Vgs :
1.6 V
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Dual
JESD-609 Code :
e3
Rise Time :
12ns
Turn-Off Delay Time :
12 ns
Number of Elements :
1
Factory Lead Time :
10 Weeks
Fall Time (Typ) :
12 ns
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Transistor Application :
SWITCHING
Terminal Finish :
Tin (Sn)
FET Type :
N-Channel
Dual Supply Voltage :
30V
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
1.9A Ta
Published :
1998
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Mount :
Surface Mount
Vgs (Max) :
±20V
Height :
940μm
Current Rating :
1.9A
Power Dissipation-Max :
500mW Ta
Number of Terminations :
3
Continuous Drain Current (ID) :
1.9A
Mounting Type :
Surface Mount
Width :
3.05mm
Termination :
SMD/SMT
Weight :
30mg
Gate to Source Voltage (Vgs) :
20V
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
60m Ω @ 2.2A, 10V
ECCN Code :
EAR99
Threshold Voltage :
1.6V
Power Dissipation :
500mW
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
235pF @ 10V
Drain to Source Breakdown Voltage :
30V
Pbfree Code :
yes
Resistance :
60mOhm
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Additional Feature :
LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
FDN357N
Introducing Transistors - FETs, MOSFETs - Single onsemi FDN357N from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Surface Mount, Number of Pins:3, FDN357N pinout, FDN357N datasheet PDF, FDN357N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDN357N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDN357N


N-Channel Tape & Reel (TR) 60m Ω @ 2.2A, 10V ±20V 235pF @ 10V 5.9nC @ 5V TO-236-3, SC-59, SOT-23-3

FDN357N Description


FDN357N is a type of N-channel logic-level enhancement-mode field-effect transistor provided by ON Semiconductor based on its proprietary, high cell density, DMOS technology which makes this device capable of minimizing on-state resistance. It is well suited for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching, and low in-line power loss.



FDN357N Features


  • Extremely low RDS(ON)

  • High-density cell design

  • Low gate charge

  • Proprietary, high cell density, DMOS technology 

  • Available in the SOT-23 package



FDN357N Applications


  • Notebook computers

  • Portable phones

  • PCMCIA cards

  • Battery-powered circuits


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