FDN357N
- Mfr.Part #
- FDN357N
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 1.9A SUPERSOT3
- Stock
- 7,425
- In Stock :
- 7,425
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 2.92mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Radiation Hardening :
- No
- Turn On Delay Time :
- 5 ns
- Min Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- 30V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 5.9nC @ 5V
- Nominal Vgs :
- 1.6 V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Rise Time :
- 12ns
- Turn-Off Delay Time :
- 12 ns
- Number of Elements :
- 1
- Factory Lead Time :
- 10 Weeks
- Fall Time (Typ) :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Dual Supply Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 1.9A Ta
- Published :
- 1998
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Height :
- 940μm
- Current Rating :
- 1.9A
- Power Dissipation-Max :
- 500mW Ta
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 1.9A
- Mounting Type :
- Surface Mount
- Width :
- 3.05mm
- Termination :
- SMD/SMT
- Weight :
- 30mg
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 2.2A, 10V
- ECCN Code :
- EAR99
- Threshold Voltage :
- 1.6V
- Power Dissipation :
- 500mW
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 235pF @ 10V
- Drain to Source Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Resistance :
- 60mOhm
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDN357N

N-Channel Tape & Reel (TR) 60m Ω @ 2.2A, 10V ±20V 235pF @ 10V 5.9nC @ 5V TO-236-3, SC-59, SOT-23-3
FDN357N Description
FDN357N is a type of N-channel logic-level enhancement-mode field-effect transistor provided by ON Semiconductor based on its proprietary, high cell density, DMOS technology which makes this device capable of minimizing on-state resistance. It is well suited for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits requiring fast switching, and low in-line power loss.
FDN357N Features
-
Extremely low RDS(ON)
-
High-density cell design
-
Low gate charge
-
Proprietary, high cell density, DMOS technology
-
Available in the SOT-23 package
FDN357N Applications
-
Notebook computers
-
Portable phones
-
PCMCIA cards
-
Battery-powered circuits
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