FDN342P

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Mfr.Part #
FDN342P
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
MOSFET P-CH 20V 2A SUPERSOT3
Stock
68,055
In Stock :
68,055

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
-20V
Turn On Delay Time :
20 ns
Voltage - Rated DC :
-20V
Dual Supply Voltage :
20V
Number of Pins :
3
Published :
1999
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
12V
Power Dissipation-Max :
500mW Ta
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Threshold Voltage :
1.05V
Terminal Finish :
Tin (Sn)
Continuous Drain Current (ID) :
2A
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 4.5V
Fall Time (Typ) :
8 ns
Pbfree Code :
yes
Nominal Vgs :
1.05 V
FET Type :
P-Channel
Drain Current-Max (Abs) (ID) :
2A
Mounting Type :
Surface Mount
Weight :
30mg
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Termination :
SMD/SMT
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
PowerTrench®
Rise Time :
8ns
Operating Temperature :
-55°C~150°C TJ
Radiation Hardening :
No
Number of Terminations :
3
JESD-609 Code :
e3
Resistance :
80mOhm
Vgs (Max) :
±12V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Factory Lead Time :
10 Weeks
Element Configuration :
Single
Transistor Element Material :
SILICON
Terminal Position :
Dual
Height :
940μm
Operating Mode :
ENHANCEMENT MODE
Length :
2.92mm
Width :
1.4mm
Number of Elements :
1
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
80m Ω @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C :
2A Ta
Power Dissipation :
500mW
Input Capacitance (Ciss) (Max) @ Vds :
635pF @ 10V
REACH SVHC :
No SVHC
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Terminal Form :
Gull wing
Turn-Off Delay Time :
9 ns
Current Rating :
-2A
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Datasheets
FDN342P
Introducing Transistors - FETs, MOSFETs - Single onsemi FDN342P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, FDN342P pinout, FDN342P datasheet PDF, FDN342P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDN342P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDN342P


P-Channel Tape & Reel (TR) 80m Ω @ 2A, 4.5V ±12V 635pF @ 10V 9nC @ 4.5V TO-236-3, SC-59, SOT-23-3

FDN342P Description


The cutting-edge PowerTrench technology from ON Semiconductor is used to manufacture this P-Channel 2.5V specified MOSFET. For a wide range of gate drive voltages (2.5V–12V), it has been designed for power management applications.



FDN342P Features


  • -2 A, -20 V

  • RDS(ON) = 0.08 Ω @ VGS = -4.5 V

  • RDS(ON) = 0.13 Ω @ VGS = -2.5 V.

  • Rugged gate rating

  • High performance trench technology for extremely low RDS(ON).

  • Enhanced power SuperSOT?-3 (SOT-23)



FDN342P Applications


  • Load Switch

  • Battery Protection

  • Power Management 


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