FDN342P
- Mfr.Part #
- FDN342P
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2A SUPERSOT3
- Stock
- 68,055
- In Stock :
- 68,055
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- -20V
- Turn On Delay Time :
- 20 ns
- Voltage - Rated DC :
- -20V
- Dual Supply Voltage :
- 20V
- Number of Pins :
- 3
- Published :
- 1999
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 12V
- Power Dissipation-Max :
- 500mW Ta
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Threshold Voltage :
- 1.05V
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 2A
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- Fall Time (Typ) :
- 8 ns
- Pbfree Code :
- yes
- Nominal Vgs :
- 1.05 V
- FET Type :
- P-Channel
- Drain Current-Max (Abs) (ID) :
- 2A
- Mounting Type :
- Surface Mount
- Weight :
- 30mg
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Termination :
- SMD/SMT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PowerTrench®
- Rise Time :
- 8ns
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Resistance :
- 80mOhm
- Vgs (Max) :
- ±12V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 10 Weeks
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Height :
- 940μm
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 2.92mm
- Width :
- 1.4mm
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 2A, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Power Dissipation :
- 500mW
- Input Capacitance (Ciss) (Max) @ Vds :
- 635pF @ 10V
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 9 ns
- Current Rating :
- -2A
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDN342P

P-Channel Tape & Reel (TR) 80m Ω @ 2A, 4.5V ±12V 635pF @ 10V 9nC @ 4.5V TO-236-3, SC-59, SOT-23-3
FDN342P Description
The cutting-edge PowerTrench technology from ON Semiconductor is used to manufacture this P-Channel 2.5V specified MOSFET. For a wide range of gate drive voltages (2.5V–12V), it has been designed for power management applications.
FDN342P Features
-
-2 A, -20 V
-
RDS(ON) = 0.08 Ω @ VGS = -4.5 V
-
RDS(ON) = 0.13 Ω @ VGS = -2.5 V.
-
Rugged gate rating
-
High performance trench technology for extremely low RDS(ON).
-
Enhanced power SuperSOT?-3 (SOT-23)
FDN342P Applications
-
Load Switch
-
Battery Protection
-
Power Management
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