FDN340P
- Mfr.Part #
- FDN340P
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2A DIE
- Stock
- 35,694
- In Stock :
- 35,694
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 2A
- Nominal Vgs :
- -800 mV
- Fall Time (Typ) :
- 11 ns
- Weight :
- 30mg
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Series :
- PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 2A, 4.5V
- ECCN Code :
- EAR99
- Power Dissipation :
- 500mW
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Termination :
- SMD/SMT
- Width :
- 3.05mm
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 27 ns
- Published :
- 2007
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±8V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Drain Current-Max (Abs) (ID) :
- 2A
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 779pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Resistance :
- 70mOhm
- Manufacturer Package Identifier :
- SuperSOT3
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -20V
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 10 ns
- Number of Elements :
- 1
- Current Rating :
- -2A
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- -20V
- Power Dissipation-Max :
- 500mW Ta
- Length :
- 2.92mm
- Contact Plating :
- Tin
- Factory Lead Time :
- 10 Weeks
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- -20V
- Threshold Voltage :
- -800mV
- Drain to Source Voltage (Vdss) :
- 20V
- Rise Time :
- 9ns
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Height :
- 940μm
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 8V
- Radiation Hardening :
- No
- Datasheets
- FDN340P

P-Channel Tape & Reel (TR) 70m Ω @ 2A, 4.5V ±8V 779pF @ 10V 10nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
This P?Channel Logic Level MOSFET is produced using ON Semiconductor advanced POWERTRENCH process that has been especially tailored to minimize the on?state resistance and yet maintain low gate charge for superior switching performance.
FDN340P Features
? ?2 A, 20 V
? RDS(ON) = 70 m @ VGS = ?4.5 V
? RDS(ON) = 110 m @ VGS = ?2.5 V
? Low Gate Charge (7.2 nC Typical)
? High Performance Trench Technology for Extremely Low RDS(ON)
? High Power Version of Industry Standard SOT?23 Package. Identical Pin?Out to SOT?23 with 30% Higher Power Handling Capability
? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
FDN340P Applications
portable electronics
load switching
power management
battery charging circuits
dc?dc conversion
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